Datasheet4U Logo Datasheet4U.com

GSMDC3903Z - P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -30V, -50A, RDS(ON)=9.5mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

📥 Download Datasheet

Datasheet Details

Part number GSMDC3903Z
Manufacturer Globaltech
File Size 429.88 KB
Description P-Channel MOSFET
Datasheet download datasheet GSMDC3903Z Datasheet

Full PDF Text Transcription for GSMDC3903Z (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSMDC3903Z. For precise diagrams, and layout, please refer to the original PDF.

GSMDC3903Z 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced techn...

View more extracted text
fect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -30V, -50A, RDS(ON)=9.5mΩ@VGS=-10V „ Fast switching „ Suit for -4.5V Gate Drive Applications „ ESD HBM Typ.

More Datasheets from Globaltech

Part Number Description
GSMDC3902X N-Channel MOSFET
GSMDC3904Z N-Channel MOSFET
GSMDC3906X N-Channel MOSFET
GSMDC3906Z N-Channel MOSFET
GSMDC3907Z 30V P-Channel Enhancement Mode MOSFET
GSMDC3908X N-Channel MOSFET
GSMDC3908Z N-Channel MOSFET
GSMDC3912Z N-Channel MOSFET
GSMDC3960X N-Channel MOSFET
GSMDC3094X N-Channel MOSFET