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GSMDC3903Z Datasheet PDF

Globaltech GSMDC3903Z

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSMDC3903Z
Datasheet GSMDC3903Z Download
Manufacturer
Globaltech
Description P-Channel MOSFET
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GSMDC3903Z datasheet page 1 preview

DESCRIPTION

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ -30V, -50A, RDS(ON)=9.5mΩ@VGS=-10V „ Fast switching „ Suit for -4.5V Gate Drive

APPLICATIONS

„ ESD HBM Typ. 2KV Available „ Green Device Available „ DFN3X3-8L package design

APPLICATIONS

„ MB / VGA / Vcore „ POL

APPLICATIONS

„ Load Switch „ LED Application Packages & Pin Assignments GSMDC3903ZFF (DFN3X3-8L) GSMDC3903Z Top View Pin

DESCRIPTION

1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information GS P/N GSMDC3903Z F F Package Code Pb Free Code Part Number GSMDC3903ZFF Package DFN3X3
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