GSMDC3903Z Datasheet | Globaltech

30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -30V, -50A, RDS(ON)=9.5mΩ@VGS=-10V - Fast switching - Suit for -4.5V Gate Drive Applications - ESD HBM Typ. 2KV Available - Green Device Available - DFN3X3-8L package design Applications - MB / VGA / Vcore - POL Applications - Load Switch - LED Application Packages & Pin Assignments GSMDC3903ZFF (DFN3X3-8L) Top View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain .gs-power. 1 Ordering Information GS P/N GSMDC3903Z F F Package Code Pb Free Code Part Number GSMDC3903ZFF Package DFN3X3...