DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-30V, -50A, RDS(ON)=9.5mΩ@VGS=-10V Fast switching Suit for -4.5V Gate Drive APPLICATIONS
ESD HBM Typ. 2KV Available Green Device Available DFN3X3-8L package design APPLICATIONS
MB / VGA / Vcore POL APPLICATIONS
Load Switch LED Application Packages & Pin Assignments GSMDC3903ZFF (DFN3X3-8L) GSMDC3903Z Top View Pin DESCRIPTION
1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain 1 Ordering Information GS P/N GSMDC3903Z F F Package Code Pb Free Code Part Number GSMDC3903ZFF Package DFN3X3