DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-100V, -10A, RDS(ON)=140mΩ@VGS=-10V VGS Guaranteed ±25V Improved dv/dt capability Fast switching Green Device Available TO-252-2L package design APPLICATIONS
Networking Load Switch LED applications Packages & Pin Assignments GSMDD0903DF (TO-252-2L) Top View DESCRIPTION
Gate Source Drain GSMDD0903 1 Ordering Information GS P/N GSMDD0903 D F Package Code Pb Free Code Part Number GSMDD0903DF Package TO-252-2L Marking Information Quantity Reel 2500 PCS ABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwis
Globaltech
