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GSMDD0903 - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -100V, -10A, RDS(ON)=140mΩ@VGS=-10V.
  • VGS Guaranteed ±25V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • TO-252-2L package design.

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Datasheet preview – GSMDD0903

Datasheet Details

Part number GSMDD0903
Manufacturer Globaltech
File Size 443.57 KB
Description P-Channel MOSFET
Datasheet download datasheet GSMDD0903 Datasheet
Additional preview pages of the GSMDD0903 datasheet.

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Full PDF Text Transcription

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GSMDD0903 100V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -100V, -10A, RDS(ON)=140mΩ@VGS=-10V „ VGS Guaranteed ±25V „ Improved dv/dt capability „ Fast switching „ Green Device Available „ TO-252-2L package design Applications „ Networking „ Load Switch „ LED applications Packages & Pin Assignments GSMDD0903DF (TO-252-2L) Top View Description Gate Source Drain GSMDD0903 www.gs-power.
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