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GSMDD10N20 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 200V, 8A, RDS(ON)=400mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • VGS Guaranteed ±25V.
  • Green Device Available.
  • TO-252-2L package design.

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Datasheet preview – GSMDD10N20

Datasheet Details

Part number GSMDD10N20
Manufacturer Globaltech
File Size 503.92 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDD10N20 Datasheet
Additional preview pages of the GSMDD10N20 datasheet.

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Full PDF Text Transcription

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GSMDD10N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 200V, 8A, RDS(ON)=400mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ VGS Guaranteed ±25V „ Green Device Available „ TO-252-2L package design Applications „ Notebook „ Load Switch „ LED Applications „ Li Battery Pack Application Packages & Pin Assignments GSMDD10N20DF (TO-252-2L) Top View Description Gate Source Drain GSMDD10N20 www.gs-power.
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