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GSMDD10N20 Datasheet N-Channel MOSFET

Manufacturer: Globaltech

Datasheet Details

Part number GSMDD10N20
Manufacturer Globaltech
File Size 503.92 KB
Description N-Channel MOSFET
Download GSMDD10N20 Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

GSMDD10N20 200V N-Channel MOSFETs Product.

Key Features

  • 200V, 8A, RDS(ON)=400mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • VGS Guaranteed ±25V.
  • Green Device Available.
  • TO-252-2L package design.