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GSMDD4906 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 40V, 50A, RDS(ON)=9.5mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • TO-252-2L package design.

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Datasheet Details

Part number GSMDD4906
Manufacturer Globaltech
File Size 490.48 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMDD4906 Datasheet

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Full PDF Text Transcription

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GSMDD4906 40V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 40V, 50A, RDS(ON)=9.5mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ Green Device Available „ TO-252-2L package design Applications „ Notebook „ Load Switch „ LED Applications „ Hand-Held Device Packages & Pin Assignments GSMDD4906DF (TO-252-2L) Top View Description Gate Source Drain GSMDD4906 www.gs-power.
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