DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
60V, 6.8A, RDS(ON)=60mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available SOT-223 package design APPLICATIONS
Motor Drive Power Tools LED Lighting Packages & Pin Assignments GSMDL6910XF (SOT-223) Pin DESCRIPTION
1 Gate 2 Drain 3 Source Ordering Information GSMDL6910 1 Marking Information Part Number GSMDL6910XF Package SOT-223 Quantity 2500 PCS ABSOLUTE MAXIMUM RATINGS
TC=25ºC Unless otherwise noted Symbol Parameter Typical VDS VGS ID IDM EAS Drain-Source