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GSMDL6910 Datasheet PDF

Globaltech GSMDL6910

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSMDL6910
Datasheet GSMDL6910 Download
Manufacturer
Globaltech
Description N-Channel MOSFET
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GSMDL6910 datasheet page 1 preview

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ 60V, 6.8A, RDS(ON)=60mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ SOT-223 package design

APPLICATIONS

„ Motor Drive „ Power Tools „ LED Lighting Packages & Pin Assignments GSMDL6910XF (SOT-223) Pin

DESCRIPTION

1 Gate 2 Drain 3 Source Ordering Information GSMDL6910 1 Marking Information Part Number GSMDL6910XF Package SOT-223 Quantity 2500 PCS

ABSOLUTE MAXIMUM RATINGS

TC=25ºC Unless otherwise noted Symbol Parameter Typical VDS VGS ID IDM EAS Drain-Source
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