DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
60V, 5A, RDS(ON)=90mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available SOT-223 package design APPLICATIONS
Motor Drive Power Tools LED Lighting Packages & Pin Assignments GSMDL6912XF (SOT-223) Pin DESCRIPTION
1 Gate 2 Drain 3 Source Ordering Information GSMDL6912 1 Marking Information Part Number GSMDL6912XF Package SOT-223 ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS Drain-Source Voltage Gate –Source Voltag
Globaltech
