DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-100V, -25A, RDS(ON)=42mΩ@VGS=-10V Improved dv/dt capability Fast switching VGS guarantee ±25V Green Device Available TO-252-2L package design APPLICATIONS
Networking Load Switch LED applications Packages & Pin Assignments GSMD0903DF (TO-252-2L) Top View DESCRIPTION
Gate Source Drain GSMD0903 1 Ordering Information GS P/N GSMD0903 D F Package Code Pb Free Code Part Number GSMD0903DF Package TO-252-2L Marking Information Quantity Reel 2500 PCS ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted
Globaltech
