DESCRIPTION
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V Fast switching Suit for -1.8V/1.8V Gate Drive APPLICATIONS
Green Device Available DFN2X2-6L package design APPLICATIONS
Notebook Load Switch Networking Hand-held Instruments Packages & Pin Assignments GSMDB2116SFF (DFN2X2-6L) Top Views Pin DESCRIPTION
1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 6 Drain 1 GSMDB2116S 1 Ordering Information GS P/N GSMDB2116S F F Package Code Pb Free Code Marking In
Globaltech
