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GSMDB2116S - N+P Dual-Channel MOSFET

Description

These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.

Features

  • N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V.
  • P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V.
  • Fast switching.
  • Suit for -1.8V/1.8V Gate Drive.

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Datasheet Details

Part number GSMDB2116S
Manufacturer Globaltech
File Size 899.80 KB
Description N+P Dual-Channel MOSFET
Datasheet download datasheet GSMDB2116S Datasheet
Additional preview pages of the GSMDB2116S datasheet.

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Full PDF Text Transcription

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GSMDB2116S 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V „ P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V „ Fast switching „ Suit for -1.8V/1.
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