Full PDF Text Transcription for GSMDB2116S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
GSMDB2116S. For precise diagrams, and layout, please refer to the original PDF.
GSMDB2116S 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This ...
View more extracted text
power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V Fast switching Suit for -1.8V/1.
GSMDB2116S Datasheet
