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GSMD25N15 - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • 150V, 25A, RDS(ON)=65mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • VGS Guaranteed ±25V.
  • Green Device Available.
  • TO-252-2L package design.

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Datasheet Details

Part number GSMD25N15
Manufacturer Globaltech
File Size 518.43 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMD25N15 Datasheet

Full PDF Text Transcription for GSMD25N15 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GSMD25N15. For precise diagrams, and layout, please refer to the original PDF.

GSMD25N15 150V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced techn...

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fect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 150V, 25A, RDS(ON)=65mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ VGS Guaranteed ±25V „ Green Device Available „ TO-252-2L package design Applications „ Notebook „ Load Switch „ LED Applications „ Li battery pack application Packages & Pin Assignments GSMD25N15DF (TO-252-2L) To

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