DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
150V, 25A, RDS(ON)=65mΩ@VGS=10V Improved dv/dt capability Fast switching VGS Guaranteed ±25V Green Device Available TO-252-2L package design APPLICATIONS
Notebook Load Switch LED APPLICATIONS
Li battery pack application Packages & Pin Assignments GSMD25N15DF (TO-252-2L) Top View DESCRIPTION
Gate Source Drain GSMD25N15 1 Ordering Information GS P/N GSMD25N15 D F Package Code Pb Free Code Part Number GSMD25N15DF Marking Information Package TO-252-2L Quantity Reel 2500 PCS ABSOLUTE MAXIMUM RATINGS
Globaltech
