Globaltech Datasheet | Specifications & PDF Download

3-Terminal Positive Voltage Regulator DEC. 2009 Product Description The GS78Lxx Series of positive voltage regulators are inexpensive, easy-to-use de

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GSDSBAT54 Series Surface Mount Schottky Barrier Diodes Product Description Small signal schottky diodes 300mA / 30V. Features „ Low Turn-on Voltage

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GSM3112Z 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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GSDSS32W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 3.0A Packages Features „ Ideally s

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GSDSS12W Series Surface Mount Schottky Rectifiers Product Description Reverse Voltage 20V to 100V Forward Current 1.0A Packages Features „ Ideally s

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GSM10N10DF 100V N-Channel MOSFETs Product Description The GSM10N10DF is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON an

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GS2906B 500mA Ultra Low Dropout Regulator Product Description The GS2906B is a high performance positive voltage regulator designed for use in applic

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GS5802 High Efficiency 1.2MHz 2A Step Up Converter Product Description The GS5802 is a constant frequency, 6-pin SOT23-6L current mode step-up conver

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GS9121 1.0A/2.0A High-Side Power Switch With Flag Product Description The GS9121 serial products are high-side power switch with 80mΩ RDS(ON), availa

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GS5470 2A, 4.5V-21V Input,500kHz Synchronous, Step-Down Converter GENERAL DESCRIPTION The GS5470 is a fully integrated, high efficiency 2A synchronou

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GSMDS3807 30V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS t

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GSM2120Y 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMO

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GSMDC2209V 20V P-Channel Dual MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS techn

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GSMDS3911 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description GSM4435S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to pr

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GSM3911P 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

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GSTM8050LT1 NPN General Purpose Transistor Product Description This device is designed as a general purpose amplifier and switch. Features „ Collect

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GSTMMBT2222A NPN General Purpose Transistors Product Description This device is designed as a general purpose amplifier and switch. Features „ Lead(

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GSTS772 PNP Epitaxial Planar Transistors Product Description This device is designed as a general purpose amplifier and switch. Features „ Collector

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GSTD882 NPN Epitaxial Planar Transistors Product Description This device is designed as a general purpose amplifier and switch. Features „ Lead(Pb)-

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