Globaltech GSM6601
MOSFET
| Part No. | GSM6601 |
|---|---|
| Datasheet | GSM6601 Download |
| Manufacturer |  Globaltech |
| Description | MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GSM6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM6601TSF (TSOP-6)FEATURES
● N-Channel 30V/3.4A,RDS(ON)=68mΩ@VGS=10V 30V/3.0A,RDS(ON)=74mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=90mΩ@VGS=2.5V● P-Channel -30V/-2.6A,RDS(ON)=115mΩ@VGS=-10V -30V/-2.0A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=235mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
● TSOP-6 package design
APPLICATIONS
● Power Management in Note book● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter GSM6601 Pin Symbo l 1 G1 2 S2
