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GSM6604 Datasheet MOSFET

Manufacturer: Globaltech

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Datasheet Details

Part number GSM6604
Manufacturer Globaltech
File Size 1.53 MB
Description MOSFET
Download GSM6604 Download (PDF)

General Description

GSM6604, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.

Overview

20V N & P Pair Enhancement Mode MOSFET Product.

Key Features

  • N-Channel 20V/3.5A,RDS(ON)=52mΩ@VGS=4.5V 20V/2.6A,RDS(ON)=62mΩ@VGS=2.5V.
  • P-Channel -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=150mΩ@VGS=-2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TSOP-6P package design Packages & Pin Assignments GSM6604TSF (TSOP-6P).

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