DESCRIPTION
GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM1012EX7F (SOT-523) FEATURES
20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation ESD Protected SOT-523 package design APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers 1 Gate 2 Source 3 Drain Ordering Information GSM1012E 1 Marking Information Part Number GSM1012EX7F Package SOT-523 ABSOLUTE MAXIMUM RATINGS
(TA=25ºC unless otherwise...
Globaltech
