GSM1012E Description
GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications. Packages & Pin Assignments GSM1012EX7F (SOT-523).
GSM1012E Key Features
- 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V
- 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V
- 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- ESD Protected
- SOT-523 package design