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GSM1012E - 20V N-Channel MOSFET

General Description

GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V.
  • 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V.
  • 20V/0.4A,RDS(ON)=560mΩ@VGS=1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • ESD Protected.
  • SOT-523 package design.

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Datasheet Details

Part number GSM1012E
Manufacturer Globaltech
File Size 0.97 MB
Description 20V N-Channel MOSFET
Datasheet download datasheet GSM1012E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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20V N-Channel Enhancement Mode MOSFET Product Description GSM1012E, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Packages & Pin Assignments GSM1012EX7F (SOT-523) Features „ 20V/0.6A,RDS(ON)=360mΩ@VGS=4.5V „ 20V/0.5A,RDS(ON)=420mΩ@VGS=2.5V „ 20V/0.4A,RDS(ON)=560mΩ@VGS=1.