Datasheet4U Logo Datasheet4U.com

GSM1012 - N-Channel MOSFET

General Description

GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Key Features

  • 20V/0.6A,RDS(ON)=360m@VGS=4.5V.
  • 20V/0.5A,RDS(ON)=420m@VGS=2.5V.
  • 20V/0.4A,RDS(ON)=560m@VGS=1.8V.
  • Low Offset (Error) Voltage.
  • Low-Voltage Operation.
  • High-Speed Circuits.
  • Low Battery Voltage Operation.
  • SOT-523 package design.

📥 Download Datasheet

Datasheet Details

Part number GSM1012
Manufacturer Globaltech
File Size 0.96 MB
Description N-Channel MOSFET
Datasheet download datasheet GSM1012 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
GSM4 Stepper Motor Drive GerrnWich
GSM5 Stepper Motor Drive GerrnWich
GSM793E 80CH Segment Driver Syntec Semiconductor
GSM7980 Dot Matrix LCD Controller/Driver Syntec Semiconductor
GSM850 (GSM850 / GSM900) Antenna Switch Module Hitachi

Other Datasheets by Globaltech

Part Number Description
GSM1012E 20V N-Channel MOSFET
GSM1024 N-channel MOSFET
GSM1072K N-Channel MOSFET
GSM1072KTFF 20V N-Channel Enhancement Mode MOSFET
GSM1072KX7F 20V N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
20V N-Channel Enhancement Mode MOSFET Product Description GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 20V/0.6A,RDS(ON)=360m@VGS=4.5V „ 20V/0.5A,RDS(ON)=420m@VGS=2.5V „ 20V/0.4A,RDS(ON)=560m@VGS=1.