GSM1012 Description
GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM1012 Key Features
- 20V/0.6A,RDS(ON)=360m@VGS=4.5V
- 20V/0.5A,RDS(ON)=420m@VGS=2.5V
- 20V/0.4A,RDS(ON)=560m@VGS=1.8V
- Low Offset (Error) Voltage
- Low-Voltage Operation
- High-Speed Circuits
- Low Battery Voltage Operation
- SOT-523 package design