Globaltech GSM1012
N-Channel MOSFET
DESCRIPTION
GSM1012, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industrial surface mount applications.FEATURES
20V/0.6A,RDS(ON)=360m@VGS=4.5V 20V/0.5A,RDS(ON)=420m@VGS=2.5V 20V/0.4A,RDS(ON)=560m@VGS=1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation SOT-523 package designAPPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Smart Phones, Pagers Packages & Pin Assignments GSM1012X7F (SOT-523) 1 Gate 2 Source 3 Drain GSM1012 1 Ordering Information GS P/N GSM1012 X7 F Package Code Pb Free Code Pa