GSM2318A Overview
Key Features
- 40V/2.6A,RDS(ON)=68mΩ@VGS=10V
- 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V
- Super high density cell design for extremely low RDS (ON)
- Exceptional on-resistance and maximum DC current capability
- SOT-23 package design
| Part | GSM2318A |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Globaltech |
| Size | 431.54 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |