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GSM2318A - N-Channel MOSFET

Datasheet Summary

Description

GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 40V/2.6A,RDS(ON)=68mΩ@VGS=10V.
  • 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet preview – GSM2318A

Datasheet Details

Part number GSM2318A
Manufacturer Globaltech
File Size 431.54 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM2318A Datasheet
Additional preview pages of the GSM2318A datasheet.

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Full PDF Text Transcription

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GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 40V/2.6A,RDS(ON)=68mΩ@VGS=10V „ 40V/2.2A,RDS(ON)=88mΩ@VGS=4.
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