GSM2318A Datasheet | Globaltech

40V N-Channel Enhancement Mode MOSFET Product Description GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Features - 40V/2.6A,RDS(ON)=68mΩ@VGS=10V - 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOT-23 package design Applications - Portable Equipment - Battery...