DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V Improved dv/dt capability Fast switching Suit for -1.8V Gate Drive APPLICATIONS
Green Device Available SOT-23 package design APPLICATIONS
Notebook Load Switch Hand-held Instruments Packages & Pin Assignments GSM2313PJZF (SOT-23) Top Views Pin DESCRIPTION
1 Gate 2 Source 3 Drain Ordering Information GSM2313P 1 Marking Information Part Number GSM2313PJZF Package SOT-23 Part Marking QYWMM Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol
Globaltech
