GSM2312P Overview
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
GSM2312P Key Features
- 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- Suit for 1.8V Gate Drive