GSM2312P Datasheet | Globaltech

20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V - Improved dv/dt capability - Fast switching - Suit for 1.8V Gate Drive Applications - Green Device Available - SOT-23 package design Applications - Notebook - Load Switch - Hand-Held Instruments Packages & Pin Assignments GSM2...