DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V Improved dv/dt capability Fast switching Suit for 1.8V Gate Drive APPLICATIONS
Green Device Available SOT-23 package design APPLICATIONS
Notebook Load Switch Hand-Held Instruments Packages & Pin Assignments GSM2312PJZF (SOT-23) Top Views Pin DESCRIPTION
1 Gate 2 Source 3 Drain Ordering Information GSM2312P 1 Marking Information Part Number GSM2312PJZF Package SOT-23 Part Marking TYWMM Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol Par
Globaltech
