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GSM2312P - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for 1.8V Gate Drive.

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Datasheet preview – GSM2312P

Datasheet Details

Part number GSM2312P
Manufacturer Globaltech
File Size 569.07 KB
Description N-Channel MOSFET
Datasheet download datasheet GSM2312P Datasheet
Additional preview pages of the GSM2312P datasheet.

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GSM2312P 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.
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