GSM2312P Overview
Key Features
- 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
- Improved dv/dt capability
- Fast switching
- Suit for 1.8V Gate Drive Applications
- Green Device Available
- SOT-23 package design
| Part | GSM2312P |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Globaltech |
| Size | 569.07 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |