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GSM2319Y - P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Suit for -1.5V Gate Drive.

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Datasheet Details

Part number GSM2319Y
Manufacturer Globaltech
File Size 564.40 KB
Description P-Channel MOSFET
Datasheet download datasheet GSM2319Y Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM2319Y 20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V „ Improved dv/dt capability „ Fast switching „ Suit for -1.