GSM2319Y Datasheet PDF

Globaltech GSM2319Y

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

Part No.	GSM2319Y
Datasheet	GSM2319Y Download
Manufacturer	Globaltech
Description	P-Channel MOSFET
Buy	Stock & Price

DESCRIPTION

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

-20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V Improved dv/dt capability Fast switching Suit for -1.5V Gate Drive

APPLICATIONS

Green Device Available SOT-523 package design

APPLICATIONS

Notebook Load Switch Hand-Held Instruments Battery Protection Packages & Pin Assignments GSM2319YX7F (SOT-523) Top Views Pin

DESCRIPTION

1 Gate 2 Source 3 Drain Ordering Information GSM2319Y 1 Marking Information Part Number GSM2319YX7F Package SOT-523 Part Marking FYM Quantity 3000pcs

ABSOLUTE MAXIMUM RATINGS

TC=25ºC Unless