DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5 Improved dv/dt capability Fast switching Suit for -1.8V Gate Drive APPLICATIONS
Green Device Available SOT-23-6L package design APPLICATIONS
Notebook Load Switch Networking Packages & Pin Assignments GSM2307PRF (SOT-23-6L) GSM2307P Top Views Pin DESCRIPTION
1 Drain 2 Drain 3 Gate 4 Source 5 Drain 6 Drain 1 Ordering Information Marking Information Part Number GSM2307PRF Package SOT-23-6L Part Marking UYWMM Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless othe
Globaltech
