GSM2307P Datasheet | Globaltech

20V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications. Features - -20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5 - Improved dv/dt capability - Fast switching - Suit for -1.8V Gate Drive Applications - Green Device Available - SOT-23-6L package design Applications - Notebook - Load Switch - Networking Packages & Pin Assignments GSM2307PR...