DESCRIPTION
GSM2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. FEATURES
20V/2.4A,RDS(ON)=90mΩ@VGS=4.5V 20V/2.0A,RDS(ON)=110mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design APPLICATIONS
Portable Equipment Battery Powered System Net Working System Packages & Pin Assignments GSM2302ASJZF (SOT-23) GSM2302AS Pin DESCRIPTION
1 Gate 2 Source 3 Drain Ordering Information GS P/N GSM2302AS JZ F Package Code Halogen Free/ Pb Free Code 1 Marking Information Part Number GSM2302ASJZF Package SOT-23 Part Marking S2YW Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC unless o...
Globaltech
