GSM2302AS Description
GSM2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications.
GSM2302AS Key Features
- 20V/2.4A,RDS(ON)=90mΩ@VGS=4.5V
- 20V/2.0A,RDS(ON)=110mΩ@VGS=2.5V
- Super high density cell design for extremely
- Exceptional on-resistance and maximum DC
- SOT-23 package design