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GSM2308AP Datasheet PDF

Globaltech GSM2308AP

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
Part No. GSM2308AP
Datasheet GSM2308AP Download
Manufacturer
Globaltech
Description N-Channel MOSFET
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GSM2308AP datasheet page 1 preview

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

FEATURES

„ 60V, 6.1A, RDS(ON)=85mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ SOT-23 package design

APPLICATIONS

„ Motor Drive „ Power Tools „ LED Lighting Packages & Pin Assignments GSM2308APJZF (SOT-23) Top Views Pin

DESCRIPTION

1 Gate 2 Source 3 Drain Ordering Information GSM2308AP 1 Marking Information Part Number GSM2308APJZF Package SOT-23 Part Marking NYWMM Quantity 3000pcs

ABSOLUTE MAXIMUM RATINGS

TA=25ºC Unless otherwise noted Symbol Parameter VDS VGS ID ID
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