DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
60V, 6.1A, RDS(ON)=85mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available SOT-23 package design APPLICATIONS
Motor Drive Power Tools LED Lighting Packages & Pin Assignments GSM2308APJZF (SOT-23) Top Views Pin DESCRIPTION
1 Gate 2 Source 3 Drain Ordering Information GSM2308AP 1 Marking Information Part Number GSM2308APJZF Package SOT-23 Part Marking NYWMM Quantity 3000pcs ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol Parameter VDS VGS ID ID