DESCRIPTION
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
-30V, -3.8A, RDS(ON)=75mΩ@VGS=-10V Fast switching Suit for -4.5V Gate Drive APPLICATIONS
G-S ESD Protection Diode Embedded Green Device Available SOT-23 package design APPLICATIONS
Notebook Load Switch Battery Protection Hand-held Instruments Packages & Pin Assignments GSM2309KPJZF(SOT-23) GSM2309KP 1 Gate 2 Source 3 Drain 1 Ordering Information Part Number GSM2309KPJZF Marking Information Package SOT-23 Quantity Reel 3000 PCS ABSOLUTE MAXIMUM RATINGS
(TA=25ºC unless otherwise not
Globaltech
