GSM2309S
GSM2309S is 20V P-Channel Enhancement Mode MOSFET manufactured by Globaltech.
20V P-Channel Enhancement Mode MOSFET
Product Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
Features
- -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
- Improved dv/dt capability
- Fast switching
- Green Device Available
- Suit for -1.8V Gate Drive Applications
Applications
- Notebook
- Load Switch
- Battery Protection
- Hand-held Instruments
Packag...
