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GSM2309S Datasheet 20v P-channel Enhancement Mode MOSFET

Manufacturer: Globaltech

Overview: GSM2309S 20V P-Channel Enhancement Mode MOSFET Product.

Datasheet Details

Part number GSM2309S
Manufacturer Globaltech
File Size 481.50 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet GSM2309S-Globaltech.pdf

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency fast switching applications.

Key Features

  • -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

GSM2309S Distributor