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GSM2309S - 20V P-Channel Enhancement Mode MOSFET

General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Key Features

  • -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • Suit for -1.8V Gate Drive.

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Datasheet Details

Part number GSM2309S
Manufacturer Globaltech
File Size 481.50 KB
Description 20V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet GSM2309S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GSM2309S 20V P-Channel Enhancement Mode MOSFET Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V  Improved dv/dt capability  Fast switching  Green Device Available  Suit for -1.8V Gate Drive Applications Applications  Notebook  Load Switch  Battery Protection  Hand-held Instruments GSM2309S Packages & Pin Assignments GSM2309SJZF(SOT-23) Top Views 1 Gate 2 Source 3 Drain www.gs-power.