Datasheet Details
| Part number | GSMD18N20 |
|---|---|
| Manufacturer | Globaltech |
| File Size | 498.96 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 GSMD18N20 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- 200V, 18A, RDS(ON)=140mΩ@VGS=10V.
- Improved dv/dt capability.
- Fast switching.
- VGS Guaranteed ±25V.
- Green Device Available.
- TO-252-2L package.