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GSMD18N20 - N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 200V, 18A, RDS(ON)=140mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • VGS Guaranteed ±25V.
  • Green Device Available.
  • TO-252-2L package.

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Datasheet preview – GSMD18N20

Datasheet Details

Part number GSMD18N20
Manufacturer Globaltech
File Size 498.96 KB
Description N-Channel MOSFET
Datasheet download datasheet GSMD18N20 Datasheet
Additional preview pages of the GSMD18N20 datasheet.

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GSMD18N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 200V, 18A, RDS(ON)=140mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ VGS Guaranteed ±25V „ Green Device Available „ TO-252-2L package Applications „ LED Backlight & Lighting „ UPS „ High Voltage Switching „ Motor Drive Applications Packages & Pin Assignments GSMD18N20DF (TO-252-2L) Top View Description Gate Source Drain GSMD18N20 www.
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