DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
200V, 18A, RDS(ON)=140mΩ@VGS=10V Improved dv/dt capability Fast switching VGS Guaranteed ±25V Green Device Available TO-252-2L package APPLICATIONS
LED Backlight & Lighting UPS High Voltage Switching Motor Drive APPLICATIONS
Packages & Pin Assignments GSMD18N20DF (TO-252-2L) Top View DESCRIPTION
Gate Source Drain GSMD18N20 1 Ordering Information GS P/N GSMD18N20 D F Package Code Pb Free Code Part Number GSMD18N20DF Package TO-252-2L Quantity Reel 2500 PCS Marking Information MD18N20 YW MMMM Pa
Globaltech
