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GSMDL0910
100V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
100V, 3A, RDS(ON)=185mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available SOT-223 package design
Applications
Notebook Load Switch LED applications
Packages & Pin Assignments
GSMDL0910XF (SOT-223)
Pin Description 1 Gate 2 Drain 3 Source
Ordering Information
GSMDL0910
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GSMDL0910 Datasheet
