DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. FEATURES
100V, 3A, RDS(ON)=185mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available SOT-223 package design APPLICATIONS
Notebook Load Switch LED applications Packages & Pin Assignments GSMDL0910XF (SOT-223) Pin DESCRIPTION
1 Gate 2 Drain 3 Source Ordering Information GSMDL0910 1 Marking Information Part Number GSMDL0910XF Package SOT-223 ABSOLUTE MAXIMUM RATINGS
TA=25ºC Unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Cont
Globaltech
