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GSMDP0902 - 100V N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 100V, 80A, RDS(ON)=13mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS guaranteed.
  • Green Device Available.

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Datasheet preview – GSMDP0902

Datasheet Details

Part number GSMDP0902
Manufacturer Globaltech
File Size 433.73 KB
Description 100V N-Channel MOSFETs
Datasheet download datasheet GSMDP0902 Datasheet
Additional preview pages of the GSMDP0902 datasheet.

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GSMDP0902 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features ◼ 100V, 80A, RDS(ON)=13mΩ@VGS=10V ◼ Improved dv/dt capability ◼ Fast switching ◼ 100% EAS guaranteed ◼ Green Device Available Applications ◼ Networking ◼ Load Switch ◼ LED Applications ◼ Quick Charger Packages & Pin Assignments GSMDP0902TF (TO-220) Top View Pin Description 1 Gate 2 Drain 3 Source GSMDP0902 www.gs-power.
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