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GSMDS3906
30V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
30V, 20A, RDS(ON)=6mΩ@VGS=10V Improved dv/dt capability Fast switching Green Device Available SOP-8 package design
Applications
Notebook Load Switch LED Applications Hand-Held Device
Packages & Pin Assignments
GSMDS3906SF (SOP-8)
GSMDS3906
Top View
Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain
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GSMDS3906 Datasheet
