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GSMDS3911 - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -30V, -5.5A, RDS(ON)=50mΩ@VGS=-10V.
  • Fast switching.
  • Suit for -4.5V Gate Drive.

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Datasheet Details

Part number GSMDS3911
Manufacturer Globaltech
File Size 553.81 KB
Description P-Channel MOSFET
Datasheet download datasheet GSMDS3911 Datasheet

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Full PDF Text Transcription

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GSMDS3911 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -30V, -5.5A, RDS(ON)=50mΩ@VGS=-10V „ Fast switching „ Suit for -4.
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