Datasheet Details
| Part number | GSMDS3912 |
|---|---|
| Manufacturer | Globaltech |
| File Size | 501.31 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 GSMDS3912 Datasheet
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| Part number | GSMDS3912 |
|---|---|
| Manufacturer | Globaltech |
| File Size | 501.31 KB |
| Description | N-Channel MOSFET |
| Datasheet |
GSMDS3912 Datasheet
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|
|
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
GSMDS3912 30V N-Channel MOSFETs Product.
| Part Number | Description |
|---|---|
| GSMDS3911 | P-Channel MOSFET |
| GSMDS3903 | P-Channel MOSFET |
| GSMDS3904 | N-Channel MOSFET |
| GSMDS3906 | N-Channel MOSFET |
| GSMDS3907 | P-Channel MOSFET |
| GSMDS3908 | N-Channel MOSFET |
| GSMDS3710 | N+P Dual-Channel MOSFET |
| GSMDS3807 | Dual P-Channel MOSFET |
| GSMDS3810 | Dual N-Channel MOSFET |
| GSMDS04N15 | N-Channel MOSFET |