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GSMDS6808 Datasheet Dual N-Channel MOSFET

Manufacturer: Globaltech

Datasheet Details

Part number GSMDS6808
Manufacturer Globaltech
File Size 450.72 KB
Description Dual N-Channel MOSFET
Download GSMDS6808 Download (PDF)

General Description

These Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency fast switching applications.

Overview

GSMDS6808 60V Dual N-Channel MOSFETs Product.

Key Features

  • 60V, 10A, RDS(ON)=34mΩ@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • SOP-8 package design.