SSFP4N90 Datasheet | Good-Ark Semiconductor

Description Star MOS is a new generation of high voltage N- Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. Star MOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application - Switching application VDSS = 900V ID25 = 4A RDS(ON) = 4.2Ω Pin1- Gate Pin2- Drain Pin1- Source Absolute Maximum Ratings ID@Tc=25ْ C ID@Tc=100ْC Parameter Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V IDM Pulsed Drain Current ① PD@TC=25ْC Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy ② IAR Avalanche Current ① EAR Repetitive Avalanche Energy ① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 4 2.3 16 140 1.12 ±30 170 2.2 8.5 4.0 - 55 to +150 300(1.6mm from case) 10 Ibf- in(1.1N- m) Units W W/ْ C V m J A m J V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case - - 0.89 RθCS Case-to-Sink,Flat,Greased Surface -...