SSFP6N80 - Power MOSFET

This page provides the datasheet information for the SSFP6N80, a member of the SSFP6N80-Good Power MOSFET family.

Datasheet Summary

Description

StarMOS is a new generation of high voltage N

Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect, increases packing density and reduces the on-resistance.

Good-Ark

📥 Download Datasheet

Datasheet Details

Part number	SSFP6N80
Manufacturer	Good-Ark
File Size	122.14 KB
Description	Power MOSFET
Datasheet	SSFP6N80 Datasheet
Additional preview pages of the SSFP6N80 datasheet.

📁 Similar Datasheet

SSF-LXH100GD - LED (Lumex)
SSF-LXH100GD-01 - LED (Lumex)
SSF-LXH100HGW - LED (Lumex)
SSF-LXH100xx - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF-LXH2100xx - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF-LXH400 - PC-TYPE/STACKABLE LED LAMP (Lumex Opto Components)
SSF-LXH400GD - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF-LXH400xx - (SSF-LXHxxxx) LED (Lumex Opto Components)
SSF0115 - MOSFET (Silikron)
SSF1006 - MOSFET (Silikron)

Other Datasheets by Good-Ark

SSFP6N10 - Power MOSFET
SSFP6N40 - Power MOSFET
SSFP6N70 - Power MOSFET
SSFP6N90 - Power MOSFET
SSFP6904 - 60V N-Channel MOSFET
SSFP10N10 - Power MOSFET
SSFP10N40 - Power MOSFET
SSFP10N60 - Power MOSFET

Full PDF Text Transcription

Click to expand full text

SSFP6N80 StarMOST Power MOSFET ■ Extremely high dv/dt capability ■ Low Gate Charge Qg results in Simple Drive Requirement ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Application ■ Switching application VDSS = 800V ID25 = 5.8A RDS(ON) = 1.

Published: May 7, 2015 |