Good-Ark Semiconductor 2N2222A
The 2N2222A is silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. It is designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage.| Part No. | 2N2222A |
|---|---|
| Datasheet | 2N2222A Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
2N2222A NPN TransistorABSOLUTE MAXIMUM RATINGS
Parameter Collector-Base Votlage (IE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage(IC=0) Collector Current Total Dissipation at TA≤25℃ at TC≤25℃ Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Operating Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Rthja Rthjc TJ TSTG Rating 75 40 6 800 0.5 1.8 300 83.3 175 -65 ~ 200ELECTRICAL CHARACTERISTICS
(TC = 25 °C unless otherwise noted) Parameter Symbol Test Condition. Collector Cut-off Current (IE=0) VCB=60V ICBO VCB=60V, TC=150°C Collector Cut-off Current (VBE=-3V) ICEX VCE=60V Base Cut-off Current(VBE=-3V) IBEX VCE=60V Emitter Cut-off Current(IC=0) IEBO VEB=3V Collector-Base Breakdown Voltage (IE=0) V(BR)CBO* IC=10u A Collector-Emitter Breakdown Voltage(IB=0) V(BR)CEO* IC=10mA Emitter-Base Breakdown Voltage(IC=0) V(BR)EBO* IE=10uA Collector-Emitter Saturation Voltage VCE(sat)* IC=150mA IB=15mA IC=500mA IB=50mA Base-Emitter...
