Good-Ark Semiconductor 2N3904
NPN Transistor
FEATURES
● NPN silicon epitaxial planar transistor for switching and Amplifier applications 2N3904 NPN Transistor 1. EMILTTER 2. BASE 3. COLLECTOR TO-92ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 60 Collector-Emitter Voltage VCEO 40 Emitter-Base Voltage VEBO 6 Collector Current-Continuous IC 0.2 Collector Power Dissipation Operation Junction and Storage Temperature Range PC TJ, Tstg 0.625 -65 to +150 Schematic Diagram Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Test Conditions Min Collector-Base Breakdown Voltage V(BR)CBO IC=10mA, IE=0 60 Collector-Emitter Breakdown Voltage V(BR)CEO IC= 1mA, IB=0 40 Emitter-Base Breakdown Voltage V(BR)EBO IE=10mA, IC=0 6 Collector Cut-Off Current ICBO VCB= 60V, IE=0 - Collector Cut-Off Current Emitter Cut-Off Current ICEX VCE= 30V, VEB(off)=3V - IEBO VEB= 5V, IC=0 - hFE1 VCE= 1V, IC=10mA 100 DC Current Gain hFE2 VCE= 1V, IC=50mA 60 hFE3...