Good-Ark Semiconductor 2N7002KU
N-Channel MOSFET
| Part No. | 2N7002KU |
|---|---|
| Datasheet | 2N7002KU Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
SOT-23● Advanced MOSFET process technology
● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● ESD Rating：2000V HBM
● 150℃ operating temperature
● Lead free product 2N7002KU 60V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram
DESCRIPTION
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Thermal Resistance Max. 0.3 1.2 0.63 60 ± 20 -55 to +150 Symbol RθJA Characteristics Junction-to-ambient (t ≤ 10s) ④ Typ. — Max.
