Good-Ark Semiconductor BAV99W
Switching Diode
| Part No. | BAV99W |
|---|---|
| Datasheet | BAV99W Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | Switching Diode |
| Buy | Stock & Price |
FEATURES
● Fast switching speed● High conductance
● SOT-323 small package
● RoHS compliant
APPLICATIONS
● High-speed switching in surface mounted circuits BAV99W Switching Diode 3 3 2 1 SOT-323 1 2 Schematic DiagramMAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol Reverse Voltage VR Forward Current IF Forward Power Dissipation PD Junction Temperature TJ Storage Temperature TSTG Value 75 150 200 150 -55 to +150 Unit V mA mW °C °CELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Symbol Conditions Min. Reverse Breakdown Voltage VBR IR=100μA 75 IF=1mA - Forward Voltage IF=10mA - VF IF=50mA - IF=150mA - VR=75V - Reverse Voltage Leakage Current IR VR=25V - Diode Capacitance CD VR=0V, f=1MHz - Reverse Recovery Time trr IF=IR=10mA Irr=0.1×IR, RL=100Ω - 1/3 Max. Unit - V 715 855 1000 mV 1250 2.5 uA 25 nA 2.0 pF 4.0 nS Typical Characteristic Curves BAV99W Switching Diode IR, Reverse Current (nA) IF, Forward Current (mA) VF, Forward Voltage (V) Figure 1.
