Good-Ark Semiconductor PZT5551
NPN Transistor
FEATURES
● High voltage● For high voltage amplifier applications
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ TSTG Value 180 160 6 600 1 125 150 -55 to +150 Unit V V V mA W ℃/W ℃ ℃ SOT-223 1. BASE 2. COLLECTOR 3. EMITTERELECTRICAL CHARACTERISTICS
(TA = 25 °C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Emitter Input Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) VCE(sat) VBE(sat) fT