Unisonic Technologies PZT5551
HIGH VOLTAGE SWITCHING TRANSISTOR
FEATURES
* High Collector-Emitter Voltage: VCEO=160V *High current gain NPN SILICON TRANSISTOR *Pb-free plating product number:PZT5551L ORDERING INFORMATION Order Number Normal Lead Free Plating PZT5551-x-AA3-F-R PZT5551L-x-AA3-F-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel Copyright © 2005 Unisonic Technologies Co., Ltd 1of 4 QW-R207-007,D PZT5551 ABSOLUATE MAXIUM RATINGS (Ta = 25℃) NPN SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V DC Collector Current IC 600 mA Power Dissipation PC 2 W ℃ Operating Junction Temperature TJ +150 ℃ Storage Temperature TSTG -65 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER SYMBOL θJA RATINGS 62.5 UNIT ℃/W Thermal Resistance ELECTRICAL CHARACTERISTIC...