Good-Ark Semiconductor PZTA42
NPN Transistor
FEATURES
§ High breakdown voltage § Low collector-emitter saturation voltage PZTA42 NPN Transistor B C E SOT-223 Schematic DiagramABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Pulsed Collector Power Dissipation Operation Junction and Storage Temperature Range VCBO VCEO VEBO IC ICM PC TJ,Tstg 300 V 300 V 6 V 0.2 A 0.5 A 1 W -55 to +150 ℃ELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise noted) Parameter Symbol Test Conditions Min Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance V(BR)CBO IC=100μA, IE=0 300 V(BR)CEO IC=1mA, IB=0 300 V(BR)EBO IE=100μA, IC=0 6 ICBO VCB=200V, IE=0 - IEBO VEB=6V, IC=0 -...