Good-Ark Semiconductor SSF2N60
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.| Part No. | SSF2N60 |
|---|---|
| Datasheet | SSF2N60 Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | 600V N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
TO-220● Advanced Process Technology
● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● 150℃ operating temperature
● Lead free product SSF2N60 600V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=55mH Avalanche Current @ L=55mH Operating Junction and Storage Temperature Range Max. 2 1.3 8 54 0.43 600 ± 30 110 2 -55 to + 150 Units A W W/°C V V mJ A °C Page 1 of 7 Rev.1.0 SSF2N60 600V N-Channel...
