Good-Ark Semiconductor SSPL5508
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.| Part No. | SSPL5508 |
|---|---|
| Datasheet | SSPL5508 Download |
| Manufacturer |  Good-Ark Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Advanced Process Technology● Special designed for PWM, load switching and general purpose applications
● Ultra low on-resistance with low gate charge
● Fast switching and reverse body recovery
● 175℃ operating temperature TO - 220 SSPL5508 55V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using our proprietary MOSFET technology. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS@ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=0.3mH Avalanche Current @ L=0.3mH Operating Junction and Storage Temperature Range Max. 110 83 440 200 1.3 55 ± 20 576 62 -55 to +175 Units A W W/°C V V mJ A °C Page 1 of 7 Rev.1.1 SSPL5508 55V N-Channel MOSFET The...
