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GPT03N65 - POWER FIELD EFFECT TRANSISTOR

Description

GPT03N65 POWER FIELD EFFECT TRANSISTOR

Features

  • This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching.

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Datasheet Details

Part number GPT03N65
Manufacturer Greatpower
File Size 1.37 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT03N65 Datasheet
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Full PDF Text Transcription

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06GENERAL DESCRIPTION GPT03N65 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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