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GPT02N50A - POWER FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

GPT02N50A POWER FIELD EFFECT TRANSISTOR

Features

  • This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching.

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Datasheet Details

Part number GPT02N50A
Manufacturer Greatpower
File Size 1.38 MB
Description POWER FIELD EFFECT TRANSISTOR
Datasheet download datasheet GPT02N50A Datasheet
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Full PDF Text Transcription

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GENERAL DESCRIPTION GPT02N50A POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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