GPT02N60 datasheet by Greatpower.
| Part number | GPT02N60 |
|---|---|
| Datasheet | GPT02N60-Greatpower.pdf |
| File Size | 364.31 KB |
| Manufacturer | Greatpower |
| Description | POWER FIELD EFFECT TRANSISTOR |
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FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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