GPT02N60A - POWER FIELD EFFECT TRANSISTOR

Key Features

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching.

GPT02N60A power field effect transistor by Greatpower - Datasheet Preview

Datasheet Details

Part number	GPT02N60A
Manufacturer	Greatpower
File Size	403.77 KB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT02N60A Datasheet

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GPT02N60A POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.