GPT06N60
GPT06N60 is POWER FIELD EFFECT TRANSISTOR manufactured by Greatpower.
DESCRIPTION
POWER FIELD EFFECT TRANSISTOR
FEATURES
This advanced high voltage MOSFET is designed to withstand
Higher Current Rating high energy in the avalanche mode and switch efficiently. This
Lower Rds(on) new high energy device also offers a drain-to-source diode
Lower Capacitances with fast recovery time. Designed for high voltage, high speed
Lower Total Gate Charge switching applications such as power supplies, converters,
Tighter VSD Specifications power motor controls and bridge circuits.
Avalanche Energy Specified
PIN CONFIGURATION
SYMBOL
TO-220/TO-220FP Top View
TO-251 Front View
TO-252 Front View
GATE DRAIN SOURCE
GATE DRAIN SOURCE
12 3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Drain to Current － Continuous
Rating
－ Pulsed
Gate-to-Source Voltage － Continue
Total Power Dissipation TO-251,252
TO-220
TO-220FP
Derate above 25℃
TO-251, 252
TO-220 TO-220FP
Operating and Storage Temperature Range Single Pulse...
