GPT08N50
GPT08N50 is POWER FIELD EFFECT TRANSISTOR manufactured by Greatpower.
DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination
Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability
Avalanche Energy Specified without degrading performance over time. In addition, this
Source-to-Drain Diode Recovery Time parable to a advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode avalanche and mutation modes. The new energy
Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a
IDSS and VDS(on) Specified at Elevated Temperature fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and safety margin against unexpected voltage...
