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GPT08N60D Datasheet Power Field Effect Transistor

Manufacturer: Greatpower

Overview: GPT08N60 / GPT08N60D POWER FIELD EFFECT TRANSISTOR GENERAL.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching.

More Datasheets from Greatpower

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