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GP3134
20V N-Channel MOSFET
Product Summary
V(BR)DSS
20V
RDS(on)MAX 380mΩ@4.5V 450mΩ@2.5V 800mΩ@1.8V
ID 0.75A
Feature High-Side Switching Low On-Resistance Low Threshold Fast Switching Speed ESD Protected Application Drivers:Relays, Solenoids, Lamps, Hammers,Displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers MARKING:
SOT-523
Schematic diagram
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (t=300µs) (1)
IDM
Power Dissipation (2)
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
TSTG
Value 20 ±12 0.