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2SC3736 - NPN Silicon Epitaxial Transistor

Key Features

  • High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse).
  • Total power dissipation Junction temperature Storage temperature.
  • PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 80 45 5 1 2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter.

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Datasheet Details

Part number 2SC3736
Manufacturer Guangdong Kexin Industrial
File Size 79.82 KB
Description NPN Silicon Epitaxial Transistor
Datasheet download datasheet 2SC3736 Datasheet

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www.DataSheet4U.com SMD Type NPN Silicon Epitaxia 2SC3736 Transistors Features High speed,high voltage switching. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junction temperature Storage temperature * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 80 45 5 1 2 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *.